Journals
Journals
56. Taehyun Kim, Da Eun Lim, Hyeongjun Kim, Hyunmin Nah, Heun Park, Yoon Jang Chung*, and Woongkyu Lee*, "Atomic layer deposition of Ru/rutile Al-TiO2/Ru layer stacks for high-performance silicon capacitors" - under review
55. Kyunghun Lyu, Jiyoung Park, Hyun Jae Lee*, and Woongkyu Lee*, "Emergence of Material-Driven Two-Dimensional Electron Gas by Thermodynamically Robust Layers in Al2O3/In2O3/Al2O3 Nanolaminate Structures" - under review
54. Sun Young Lee#, Hyojun Choi#, Ju Yong Park, Jaewook Lee, Dong In Han, Jeonggwang Lee, Intak Jeon, Chang Hwa Jung, Hanjin Lim*, Woongkyu Lee*, Min Hyuk Park*, "HfO2/ZrO2/HfO2 Superlattice with TiN and Mo2N Top Electrodes for DRAM Capacitors" - under review
53. Se Eun Lee#, Kibum Song#, Woongkyu Lee and Keun-Young Shin*, "Development of Two-Dimensional MXene nanosheets-Based Electrodes via Screen Printing for Low-Frequency Antenna Applications" - under review
52. Heewon Paik, Junil Lim, Haengha Seo, Tae Kyun Kim, Jong Hoon Shin, Haewon Song, Dong Gun Kim, Woongkyu Lee, Dae Seon Kwon,* and Cheol Seong Hwang*, "Enhanced Crystallization and Dielectric Properties of Atomic Layer Deposited SrTiO3 Thin Films on Ru Electrode by Inserting GeO2 Interfacial Layer" - under review
51. Haram Yang, Hyeongjun Kim, Seungmin Jo, and Woongkyu Lee*, "Atomic Layer Etching of ZrO2 Thin Films Using NF3 Plasma and TiCl4 for DRAM Capacitors", Ceram. Int. (2025) - accepted [site]
50. Hyeongjun Kim, Kyungmin Choi, Hojin Lee, and Woongkyu Lee*, "Effects of Work Function and Thermal Stability of Top Electrode Materials on Electrical Properties of ZrO2-Based DRAM Capacitors", Electron. Mater. Lett. (2025) - accepted
49. Hyeongjun Kim, Haram Yang, and Woongkyu Lee*, "Improvement of Interfacial Electrical Properties of Au/ZrO2/Al2O3/TiN Capacitors by Reduction Effect of Ar Plasma Treatment", Ceram. Int. (2025) - accepted [site]
48. Ju Yong Park, Hyojun Choi, Jaewook Lee, Kun Yang, Sun Young Lee, Dong In Han, Intak Jeon, Chang Hwa Jung, Hanjin Lim*, Woongkyu Lee* , and Min Hyuk Park*, "Enhancement of electrical properties of morphotropic phase boundary in Hf1-xZrxO2 films by integrating Mo electrode and TiN interlayer for DRAM capacitors", Appl. Surf. Sci. Adv. 27, 100733 (2025). [site] [pdf]
47. Jaejun Lee#, Kibum Song#, Keun-Young Shin* and Woongkyu Lee*, "Improved resistive switching characteristics of Au/TiO2/Au memristors on PDMS substrates with pyramid arrays", Mater. Sci. Eng. B 314, 117986 (2025). [site] [pdf]
46. Woongkyu Lee* (co-corresponding), Xianyu Chen, Qing Shao, Sung-Il Baik, Sungkyu Kim, David Seidman, Michael Bedzyk, Vinayak Dravid, John B. Ketterson, Julia Medvedeva*, Robert P. H. Chang, Matthew A. Grayson*, "Realizing the Heteromorphic Superlattice: Repeated Heterolayers of Amorphous Insulator and Polycrystalline Semiconductor with Minimal Interface Defects", Adv. Mater. 35, 2207927 (2023). [site] [pdf]
45. Jina Kim, Myeong Gil Chae, Young Joon Han, Jun Choi, Kwan Hyun Cho, Heenang Choi, Bo Keun Park, Taek-Mo Chung, Woongkyu Lee*, and Jeong Hwan Han*, "High-performance Atomic-Layer-Deposited SnO thin film transistors fabricated by intense pulsed light annealing", Appl. Surf. Sci. 609, 155281 (2023). [site] [pdf]
44. Gi-Hwan Kim, Jongseok Lee, Joon Yup Lee, Jisu Han, Yeongho Choi, Chi Jung Kang, Ki-Bum Kim, Woongkyu Lee, Jaehoon Lim, and Seong-Yong Cho, "High-Resolution Colloidal Quantum Dot Film Photolithography via Atomic Layer Deposition of ZnO", ACS Appl. Mater. Interfaces 13, 43075 (2021). [site] [pdf]
43. Dong Gun Kim, Hae-Ryoung Kim, Dae Seon Kwon, Junil Lim, Haengha Seo, Tae Kyun Kim, Heewon Paik, Woongkyu Lee*, and Cheol Seong Hwang*, "Comparison of high-k Y2O3/TiO2 bilayer and Y-doped TiO2 thin films on Ge substrate", J. Phys. D: Appl. Phys. 54, 185110 (2021). [site] [pdf]
42. Dong Gun Kim, Dae Seon Kwon, Junil Lim, Haengha Seo, Tae Kyun Kim, Woongkyu Lee*, and Cheol Seong Hwang*, "Trap Reduction through O3 Post-Deposition Treatment of Y2O3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates", Adv. Elec. Mater. 7, 200819 (2021). [site] [pdf]
41. Jun Shik Kim, Sukin Kang, Younjin Jang, Yonghee Lee, Kwangmin Kim, Whayoung Kim, Woongkyu Lee*, and Cheol Seong Hwang*, "Investigating the Reasons for the Difficult Erase Operation of a Charge-Trap Flash Memory Device with Amorphous Oxide Semiconductor Thin-Film Channel Layers", Phys. Status Solidi RRL 15, 2000549 (2021). [site] [pdf]
40. Jun Shik Kim, Younjin Jang, Sukin Kang, Yonghee Lee, Kwangmin Kim, Whayoung Kim, Woongkyu Lee*, and Cheol Seong Hwang*, "Substrate-Dependent Growth Behavior of Atomic-Layer-Deposited Zinc Oxide and Zinc Tin Oxide Thin Films for Thin-Film Transistor Applications", J. Phys. Chem. C 124, 26780 (2020). [site] [pdf]
39. Gi‐Hwan Kim, Kyeongchan Noh, Jisu Han, Minsu Kim, Nuri Oh, Woongkyu Lee, Hyon Bin Na, Chansun Shin, Tae‐Sik Yoon, Jaehoon Lim, Seong‐Yong Cho, "Enhanced Brightness and Device Lifetime of Quantum Dot Light‐Emitting Diodes by Atomic Layer Deposition", Adv. Mater. Interfaces 7, 2000343 (2020). [site] [pdf]
38. Hwang-Sik Yun, Kyeongchan Noh, Jigeon Kim, Sung Hoon Noh, Gi-Hwan Kim, Woongkyu Lee, Hyon Bin Na, Tae-Sik Yoon, Jaeyoung Jang, Younghoon Kim, Seong-Yong Cho, “CsPbBr3 Perovskite Quantum Dot Light‐Emitting Diodes Using Atomic Layer Deposited Al2O3 and ZnO Interlayers”, Phys. Status Solidi RRL 1, 1900573 (2020). [site] [pdf]
37. Cheol Hyun An, Woojin Jeon, Sang Hyeon Kim, Cheol Jin Cho, Dae Seon Kwon, Dong Gun Kim, Woongkyu Lee*, and Cheol Seong Hwang*, “Substrate Effects on the Growth Behavior of Atomic-Layer-Deposited Ru Thin Films Using RuO4 Precursor and N2/H2 Mixed Gas”, J. Phys. Chem. C 123, 22539 (2019). [site] [pdf]
36. Sang Hyeon Kim#, Woongkyu Lee#, Cheol Hyun An, Yumin Kim, Dae Seon Kwon, Dong-Gun Kim, Soon Hyung Cha, Seong Tak Cho, Junil Lim, and Cheol Seong Hwang, “Leakage Current Control of SrTiO3 Thin Films through Al Doping at the Interface between Dielectric and Electrode Layers via Atomic Layer Deposition”, Phys. Status Solidi RRL 11, 1900373 (2019). [site] [pdf]
35. Byunghong Lee, Yamuna Ezhumalai, Woongkyu Lee, Ming-Chou Chen, Chen-Yu Yeh, Tobin J. Marks, and Robert P. H. Chang, “Cs2SnI6-Encapsulated Multidye-Sensitized All-Solid-State Solar Cells”, ACS Appl. Mater. Interfaces 11, 21424 (2019). [site] [pdf]
34. Stephanie L. Moffitt, Katie L. Stallings, Allison F. Falduto, Woongkyu Lee, D. Bruce Buchholz, Binghao Wang, Qing Ma, Robert P. H. Chang, Tobin J. Marks, and Michael J. Bedzyk, “Processing, Structure, and Transistor Performance: Combustion versus Pulsed Laser Growth of Amorphous Oxides”, ACS Appl. Electron. Mater. 1, 548 (2019). [site] [pdf]
33. Sang Hyeon Kim#, Woongkyu Lee#, Cheol Hyun An, Dong-Gun Kim, Dae Seon Kwon, Seong Tak Cho, Soon Hyung Cha, Jun Il Lim, and Cheol Seong Hwang, “Effect of the annealing temperature of the seed layer on the following main layer in atomic-layer-deposited SrTiO3 thin films”, Phys. Status Solidi RRL 13, 1800557 (2019). [site] [pdf]
32. Cheol Hyun An, Woongkyu Lee, Sang Hyeon Kim, Cheol Jin Cho, Dong-Gun Kim, Dae Seon Kwon, Seong Tak Cho, Soon Hyung Cha, Jun Il Lim, Woojin Jeon, and Cheol Seong Hwang, “Controlling the electrical characteristics of ZrO2/Al2O3/ZrO2 capacitors by adopting a Ru top electrode grown via atomic layer deposition”, Phys. Status Solidi RRL 13, 1800454 (2019). [site] [pdf]
31. Woongkyu Lee# , Cheol Jin Cho#, Woo Chul Lee, Cheol Seong Hwang, Robert P. H. Chang, Seong Keun Kim, “MoO2 as a thermally stable oxide electrode for dynamic random-access memory capacitors”, J. Mater. Chem. C 6, 13250 (2018). [site] [pdf]
30. Sang Hyeon Kim#, Woongkyu Lee#, Cheol Hyun An, Dae Seon Kwon, Dong-Gun Kim, Soon Hyung Cha, Seong Tak Cho, and Cheol Seong Hwang, “Effect of growth temperature during the atomic layer deposition of the SrTiO3 seed layer on the properties of RuO2/SrTiO3/Ru capacitors for dynamic random access memory applications”, ACS Appl. Mater. Interfaces 10, 41544 (2018). [site] [pdf]
29. Woongkyu Lee, Cheol Hyun An, Sijung Yoo, Woojin Jeon, Min Jung Chung, Sang Hyeon Kim, and Cheol Seong Hwang, “Electrical Properties of ZrO2/Al2O3/ZrO2-based Capacitors with TiN, Ru, and TiN/Ru Top Electrode Materials”, Phys. Status Solidi RRL 12, 1800356 (2018). [site] [pdf]
28. Min Jung Chung, Woojin Jeon, Cheol Hyun An, Sang Hyeon Kim, Yoon Kyeung Lee, Woongkyu Lee*, and Cheol Seong Hwang*, “Quantitative analysis of the incorporation behaviors of Sr and Ti atoms during the atomic layer deposition of SrTiO3 thin films”, ACS Appl. Mater. Interfaces 10, 8836-8844 (2018). [site] [pdf]
27. Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Tony Schenk, Woongkyu Lee, Keum Do Kim, Franz P. G. Fengler, Thomas Mikolajick, Uwe Schroeder, and Cheol Seong Hwang, “Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment”, Nanoscale 9, 9973-9986 (2017). [site] [pdf]
26. Woongkyu Lee, Sijung Yoo, Kyung Jean Yoon, In Won Yeu, Hye Jung Chang, Jung-Hae Choi, Susanne Hoffmann-Eifert, Reiner Waser, Cheol Seong Hwang, “Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases”, Sci. Rep. 6, 20550 (2016). [site] [pdf]
25. Woongkyu Lee, Sijung Yoo, Woojin Jeon, Yeon Woo Yoo, Cheol Hyun An, Min Jung Chung, Han Joon Kim, Sang Woon Lee, Cheol Seong Hwang, “Reducing the nano-scale defect formation of atomic-layer-deposited SrTiO3 films by adjusting the cooling rate of the crystallization annealing of the seed layer”, Thin Solid Films 589, 723-729 (2015). [site] [pdf]
24. Woojin Jeon, Sang Ho Rha, Woongkyu Lee, Cheol Hyun An, Min Jung Chung, Sang Hyun Kim, Cheol Jin Cho, Seong Keun Kim, Cheol Seong Hwang, "Asymmetry in electrical properties of Al-doped TiO2 film with respect to bias voltage", Phys. Status Solidi RRL 9, 410-413 (2015). [site] [pdf]
23. Woongkyu Lee*, Woojin Jeon, Cheol Hyun An, Min Jung Chung, Han Joon Kim, Taeyong Eom, Sheby Mary George, Bo Keun Park, Jeong Hwan Han, Chang Gyoun Kim, Taek-Mo Chung, Sang Woon Lee, Cheol Seong Hwang, “Improved initial growth behavior of SrO and SrTiO3 films grown by atomic layer deposition with {Sr(demamp)(tmhd)}2 as Sr-precursor”, Chem. Mater. 27, 3881-3891 (2015). [site] [pdf]
22. Yeon Woo Yoo, Woojin Jeon, Woongkyu Lee, Cheol Hyun An, Seong Keun Kim, Cheol Seong Hwang, "Structure and electrical properties of Al-doped HfO2 and ZrO2 films grown via atomic layer deposition on Mo electrodes", ACS Appl. Mater. Interfaces 6, 22474-22482 (2014). [site] [pdf]
21. Woojin Jeon, Sijung Yoo, Hyo Kyeom Kim, Woongkyu Lee, Cheol Hyun An, Min Jung Chung, Cheol Jin Cho, Seong Keun Kim, Cheol Seong Hwang, "Evaluating the top electrode material for achieving an equivalent oxide thickness smaller than 0.4 nm from an Al-doped TiO2 film", ACS Appl. Mater. Interfaces 6, 21632-21637 (2014). [site] [pdf]
20. Woojin Jeon, Woongkyu Lee, Yeon Woo Yoo, Cheol Hyun An, Jeong Hwan Han, Seong Keun Kim, Cheol Seong Hwang, "Chemistry of active oxygen in RuOx and its influence on the atomic layer deposition of TiO2 films", J. Mater. Chem. C 2, 9993-10001 (2014). [site] [pdf]
19. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woongkyu Lee, Taehwan Moon, Keum Do Kim, Cheol Seong Hwang, "Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes", Appl. Phys. Lett. 105, 072902 (2014). [site] [pdf]
18. Woojin Jeon, Sang Ho Rha, Woongkyu Lee, Yeon Woo Yoo, Cheol Hyun An, Kwang Hwan Jung, Seong Keun Kim, Cheol Seong Hwang, "Controlling the Al-doping profile and accompanying electrical properties of rutile-phased TiO2 thin films", ACS Appl. Mater. Interfaces 6, 7910-7917 (2014). [site] [pdf]
17. Katsuhisa Murakami, Mathias Rommel, Boris Hudec, Alica Rosová, Kristina Hušeková, Edmund Dobročka, Raul Rammula, Aarne Kasikov, Jeong Hwan Han, Woongkyu Lee, Seul Ji Song, Albena Paskaleva, Anton J. Bauer, Lothar Frey, Karol Fröhlich, Jaan Aarik, Cheol Seong Hwang, "Nanoscale characterization of TiO2 films grown by atomic layer deposition on RuO2 electrodes", ACS Appl. Mater. Interfaces 6, 2486-2492 (2014). [site] [pdf]
16. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woongkyu Lee, Taehwan Moon, Cheol Seong Hwang, "Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature", Appl. Phys. Lett. 102, 242905 (2013). [site] [pdf]
15. Sang Woon Lee, Byung Joon Choi, Taeyong Eom, Jeong Hwan Han, Seong Keun Kim, Seul Ji Song, Woongkyu Lee, Cheol Seong Hwang, "Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials", Coord. Chem. Rev. 257, 3154-3176 (2013). [site] [pdf]
14. Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woongkyu Lee, Hyo Kyeom Kim, Cheol Seong Hwang, "Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes", Appl. Phys. Lett. 102, 112914 (2013). [site] [pdf]
13. Woongkyu Lee, Jeong Hwan Han, Woojin Jeon, Yeon Woo Yoo, Sang Woon Lee, Seong Keun Kim, Chang-Hee Ko, Clement Lansalot-Matras, Cheol Seong Hwang, "Atomic layer deposition of SrTiO3 films with cyclopentadienyl-based precursors for metal-insulator-metal capacitors", Chem. Mater. 25, 953-961 (2013). [site] [pdf]
12. Jeong Hwan Han, Woongkyu Lee, Woojin Jeon, Sang Woon Lee, and Cheol Seong Hwang, Changhee Ko, Julien Gatineau, "Growth of conductive SrRuO3 films by combining atomic layer deposited SrO and chemical vapor deposited RuO2 layers", Chem. Mater. 24, 4686-4692 (2012). [site] [pdf]
11. Seong Keun Kim, Sora Han, Woojin Jeon, Jung Ho Yoon, Jeong Hwan Han, Woongkyu Lee, Cheol Seong Hwang, "Impact of bimetal electrodes on dielectric properties of TiO2 and Al-doped TiO2 films", ACS Appl. Mater. Interfaces 4, 4726-4730 (2012). [site] [pdf]
10. Woongkyu Lee*, Jeong Hwan Han, Sang Woon Lee, Sora Han, Woo Jin Jeon, Cheol Seong Hwang, "Controlling the initial growth behavior of SrTiO3 films by interposing Al2O3 layers between the film and the Ru substrate", J. Mater. Chem. 22, 15037 (2012). [site] [pdf]
9. Taeyong Eom, Seol Choi, Byung Joon Choi, Min Hwan Lee, Taehong Gwon, Sang Ho Rha, Woongkyu Lee, Moo-Sung Kim, Manchao Xiao, Iain Buchanan, Deok-Yong Cho, Cheol Seong Hwang, "Conformal formation of (GeTe2)(1–x)(Sb2Te3)x layers by atomic layer deposition for nanoscale phase change memories", Chem. Mater. 24, 2099-2110 (2012). [site] [pdf]
8. Jeong Hwan Han, Sang Woon Lee, Seong Keun Kim, Sora Han, Woongkyu Lee, Cheol Seong Hwang, Christian Dussarat, Julien Gatineau, "Study on initial growth behavior of RuO2 film grown by pulsed chemical vapor deposition: effects of substrate and reactant feeding time", Chem. Mater. 24, 1407-1414 (2012). [site] [pdf]
7. Minha Seo, Sang Ho Rha, Seong Keun Kim, Jeong Hwan Han, Woongkyu Lee, Sora Han, Cheol Seong Hwang, "The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application", J. Appl. Phys. 110, 024105 (2011). [site] [pdf]
6. Jeong Hwan Han, Sora Han, Woongkyu Lee, Sang Woon Lee, Seong Keun Kim, Julien Gatineau, Christian Dussarrat, Cheol Seong Hwang, "Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode", Appl. Phys. Lett. 99, 022901 (2011). [site] [pdf]
5. Seong Keun Kim, Sora Han, Jeong Hwan Han, Woongkyu Lee, and Cheol Seong Hwang, "Atomic layer deposition of TiO2 and Al-doped TiO2 films on Ir substrates for ultralow leakage currents", Phys. Status Solidi RRL 5, No. 8, 262-264 (2011). [site] [pdf]
4. Boris Hudec, Kristína Hušeková, Aivar Tarre, Jeong Hwan Han, Sora Han, Alica Rosová, Woongkyu Lee, Aarne Kasikov, Seul Ji Song, Jaan Aarik, Cheol Seong Hwang, Karol Fröhlich, "Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes", Microelectron. Eng. 88, 1514-1516 (2011). [site] [pdf]
3. Sang Woon Lee, Jeong Hwan Han, Sora Han, Woongkyu Lee, Jae Hyuck Jang, Minha Seo, Seong Keun Kim, C. Dussarrat, J. Gatineau, Yo-Sep Min, Cheol Seong Hwang, "Atomic layer deposition of SrTiO3 thin films with highly enhanced growth rate for ultrahigh density capacitors", Chem. Mater. 23, 2227-2236 (2011). [site] [pdf]
2. Sang Woon Lee, Jeong Hwan Han, Seong Keun Kim, Sora Han, Woongkyu Lee, Cheol Seong Hwang, "Role of interfacial reaction in atomic layer deposition of TiO2 thin films using Ti(O-iPr)2(tmhd)2 on Ru or RuO2 substrates", Chem. Mater. 23, 976-983 (2011). [site] [pdf]
1. Seol Choi, Byung Joon Choi, Taeyong Eom, Jae Hyuck Jang, Woongkyu Lee, Cheol Seong Hwang, "Growth and phase separation behavior in Ge-Doped Sb-Te thin films deposited by combined plasma-enhanced chemical vapor and atomic layer depositions", J. Phys. Chem. C 114, 17899-17904 (2010). [site] [pdf]
1. Seokho Cho, Woogkyu Lee*, "Optimization of the Sputtering Process for TiN Thin Films as Electrodes in DRAM Capacitors", Ceramist 28, 117-125 (2025). [site] [pdf]