Facility
Atomic Layer Deposition #1
CN-1 / Atomic Basic
Thermal ALD
Traveling-wave type chamber
Wafer Size : ≤ 6 inch
Precursor : Al, Sr, Ti, Zr, Zn / Reactant : H2O, O3, CH3COCH3
담당자 : 정상연 , 이재준
Atomic Layer Deposition #2 (Plasma ALD)
NAINSOL / (PE)ALD System
Plasma Enhanced ALD (ICP)
Wafer Size : ≤ 4 inch
Precursor : Al, Ru, Mo / Reactant : H2O, O3, H2/N2
담당자 : 유경훈 , 양하람
Atomic Layer Deposition #3
Ultech / SPACE-T
Thermal ALD
Travelling-wave type Chamber
Wafer Size : ≤ 6 inch
Precursor : Al, Ti, Zr, Zn / Reactant : H2O, O3
담당자 : 홍주안 , 김태현
Magnetron Sputter
Daon corporation / Sputtering system
Up to 10rpm and Heatable up to 500℃
Wafer size : ≤ 4 inch
2” sputter gun (1kW DC, 2sets / 100W RF, 1set)
Base pressure : ≈ 5.0ｘ10 Torr
Co-sputtering by upstream
담당자 : 유경훈 , 양하람
Tube Furnace
SH scientific / SH-FU-50STG
Temperature Range : ≤ 1200 °C
Applicable Tube Diameter : 50 Φ
Dimension Hot Zone : Length 300 mm
Atmosphere : Ar, O2 , N2
담당자 : 홍주안 , 김태현
Rapid Thermal Anneal
Daon corporation / TTowa - C4V3
Temperature Range : ≤ 1000 °C
Heat up Time to 1000 °C : ≈ 30 seconds (workable for consecutive Max. 1hour 1100℃)
Sample Size : ≤ 4 inch
Gas Flow Control : H2 , N2 500 sccm / O2 500 sccm / Ar 500 sccm by MFC
담당자 : 정상연 , 이재준
Thermal Evaporator
I.T.S / Evaporator system
Pump: Roughing(Rotary pump, Dry pump), Main(Turbo pump, Cryo pump)
Substrate size ~ 𝜙320nm
Temperature <800°C (±5%)
Evaporation source : Thermal
담당자 : 홍주안, 양하람
O3 generator
OZONE TECH / CN-1
Max 220 g/m^3
Flow range : 2000 sccm
SHIN-A E&C Co., LTD. / Water Chiller
Cooling capacity : 1500 Kcal/hr
담당자 : 정상연 , 양하람
Microwave Annealing Furnace
Unicera / SINTERMAT 1600
Temp. range : ≤ 1500 ℃
Heating rate : 50℃/min (Max. 100℃/min)
Hot zone : 90 x 90 x 45 mm3
10 steps programmable
담당자 : 홍주안, 양하람
X-ray Fluorescence (XRF) Spectroscopy
Nayur / NDA-200
EDXRF
Analysis elements: S16~U92
Analysis time : 100~200s
Resolution : 149eV
Spot size: 0.5mm, 1.0mm, 3.0mm, 4x4mm
담당자 : 유경훈, 김태현
Ellipsometry
Gaertner Scientific Corporation / L116D
Light Sources : HeNe 632.8nm Gas Laser
Beam Diameter : 1 mm diameter (1 x 3 mm on wafer @ 70º)
Repeatability : ≤ 1 angstrom
Measuring Time : 3 sec
담당자 : 김형준 , 홍주안
Probe Station
MSTECH / MST 4000A
3-probe system
6" chuck
CCD Camera
HP / 4284A LCR Meter
1 MHz
40 V DC bias
HP / 4145B Semiconductor Parameter Analyzer
100 mA, 100 V
Resolution: <1 pA
담당자 : 정상연, 이재준
4-Point Probe
AiT(Advanced Instrument Technology) / CMT-100A
Current Source Range : 5nA ~ 160mA
Sheet Resistance Measuring Range : 1 mohm/sq ~ 2Mohm/sq
Resistivity Measureing Range : 10u ~ 20kohm. cm
Measurement Accuracy ± 0.5%
Wafer : Max 200mm x 200mm
담당자 : 유경훈, 김형준